specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage conditi on (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 92811 sy 20110628-s00001 no.a1973-1/7 LV59001M overview the LV59001M is output good transformation power supply ic of low consumption current, and is effective as a constant-voltage source of battery use apparatus. features ? low current consumption ? with on-off switch ? output voltage changeable type (v o : 0.8 to 3.5v) ? output current of 1a obtainable specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit maximum power supply v in 1 7v v in 2 7v allowable power dissipation pd max mounted on a specified board.* 1.45 w operating temperature topr -30 to +85 c storage temperature tstg -40 to +125 c * specified board: 50mm 50mm 1.6mm, glass epoxy both sides recommended operating ranges at ta = 25 c parameter symbol conditions ratings unit min typ max power supply v in 1 v in 1 pin 1.6 6 v v in 2 v in 2 pin 1.8 6 v output voltage setting range v o 0.8 3.5 v output current i o 0 1a bi-cmos lsi output voltage changeable type power supply ic orderin g number: ena1973
LV59001M no.a1973-2/7 electrical characteristics at ta = 25 c, v in 1 = v in 2 = 3v, v o =1.2v setting (unless otherwise specified) parameter symbol conditions ratings unit min typ max current drain i vin ctl=3v, i o = 0ma 120 170 a standby current i stby ctl = low 1 a output output voltage v o i o = 10ma, r1=51k ? , r2=255k ? 1.176 1.2 1.224 v adj pin voltage v adj 0.196 0.2 0.204 v dropout voltage 1 vdrop1_1 i o = 1a, v in 1 = v in 2 1 v vdrop1_2 i o = 0.3a, v in 1 = v in 2 0.6 v dropout voltage 2 vdrop2_1 i o = 1a, v in 2 = 3v, v in 1 dropout voltage 1 v vdrop2_2 i o = 0.3a, v in 2 = 3v, v in 1 dropout voltage 0.4 v 0.8v v o 1.2v setting v in 1, v in 2 voltage v o set1_1 i o = 1a, v in 1 = v in 2 2.25 v v o set1_2 i o = 0.3a, v in 1 = v in 2 1.85 v 0.8v v o 1.2v setting v in 1 voltage v o set2_1 i o = 1a, v in 2 = 3v 2.25 v v o set2_2 i o = 0.3a, v in 2 = 3v 1.65 v load regulation v ld i o = 5ma to 1a 10 50 mv line regulation v ln v in 1 = v in 2 = 1.8v to 6v, i o = 10ma 10 50 mv voltage temperature coefficient vt ta = -30 to +85 c, i o = 10ma * 100 ppm/ c ripple rejection v rl i o = 10ma, vrpp=1v, f rr = 1khz * 70 db output noise voltage v on 20hz < f < 20khz * 60 vrms ctl pin high level voltage v ctl h 1.5 5 v low level voltage v ctl l 0 0.3 v input current i ctl v ctl = 6v 8.5 a * design guarantee package dimensions unit : mm (typ) 3372a sanyo : mfp8(200mil) 5.0 4.4 6.0 12 8 0.15 0.35 1.27 (0.6) 1.7 max (1.5) (2.6) (3.4) 0.05 0.43 top view side view side view bottom view
LV59001M no.a1973-3/7 specified board (top side) specified board (bottom side) block diagram 1 v in 1 v in 2 ctl gnd 3 4 signal power supply current limit bandgap reference thermal protection 8 6 v o 5 adj 1.2v -30 0 20 40 60 80 100 0 2.0 1.5 1.0 0.5 pd max -- ta 1.45 0.58 -20 85 ambient temperature, ta -- c allowable power dissipation, pd max -- w specified board: 50 50 1.6mm 3 glass epoxy both sides.
LV59001M no.a1973-4/7 pin assignment 1 v in 1 2 nc 3 v in 2 4 ctl 5 6 7 8 gnd nc v o adj top view LV59001M pin function pin no. pin name function equivalent circuit 1 v in 1 power system supply input pin. 1 v in 1 6 v o 8 gnd 6 v o output voltage pin. 2 nc no contact. 3 v in 2 signal system supply input pin. v in 2 3 signal power supply 4 ctl on/off control pin. v in 2 4 8 gnd 3 ctl 5 adj adjust pin 1 v in 1 5 v o 8 gnd 6 adj 7 nc no contact. 8 gnd ground pin. 8 gnd gnd
LV59001M no.a1973-5/7 i vin -- ta i stby -- ta v ln -- ta v ld -- ta v in 1 = v in 2 = 3v -40 -5 25 55 85 -35 -5 25 55 85 -35 -5 25 55 85 -35 -5 25 55 85 130 90 100 110 120 0.100 0 0.025 0.050 0.075 2.0 1.0 1.25 1.5 1.75 0 4 6 2 v in 1 = v in 2 = 3v v o -- ta v in 1 = v in 2 = 3v i o = 10ma -35 -5 25 55 85 1.175 1.225 1.25 1.2 v ctlth -- ta v in 1 = v in 2 = 3v i o = 5ma~1a -35 -5 25 55 85 0.5 1 1.25 0.75 i ctl -- ta -35 -15 25 45 85 6.0 0 1.5 3.0 4.5 v in 1 = v in 2 = 3v 0 0.5 1 1.5 2 0 1 2 0.5 65 5 v ctl = 6v 1.5 v o -- i o v in 1 = v in 2 = 1.8 to 6v i o = 10ma v in 1 = v in 2 = 3v i o = 5ma to 1a ambient temperature, ta -- c line regulation, v ln -- mv load regulation, v ld -- mv ambient temperature, ta -- c ambient temperature, ta -- c ambient temperature, ta -- c ambient temperature, ta -- c ambient temperature, ta -- c ambient temperature, ta -- c output voltage, v o -- v clt threshold voltage, v clt th -- v output voltage, v o -- v output current, i o -- a
LV59001M no.a1973-6/7 output voltage setting method v o = ( r 2 r 1 + 1 ) v adj radiation pad ? radiation pad is high impedance and connected with a substrate of ic . ? use radiation pad by gnd or opening. 100 0 20 40 60 80 0.01 0.1 1 10 100 2 3 57 2 3 57 2 3 57 2 3 57 vrpp = 1v i o = 10ma 800 600 400 200 0 1.3 1.1 1.2 200 150 100 50 0 1.22 1.18 1.20 v rl -- f rr 100ma 600ma 50ma 150ma -40 40 120 -40 40 120 6 5 4 3 1.20 1.1 1.15 -200 1.25 i o = 100ma 200 600 4 2 0 1.0 0 0.5 1.5 4 2 0 1.0 0 0.5 1.5 ctl on ctl off t -- ms 0.2ms / div t -- ms -0.8 -0.4 0 0.4 0.8 1.2 1ms / div -4 -2 0 2 4 -4 6 ripple rejection, v rl -- db ripple frequency, f rr -- khz load response load response output voltage, v o -- v output voltage, v o -- v output current, i o -- a output current, i o -- a input response output voltage, v o -- v input voltage, v in -- v output voltage, v o -- v ctl input voltage, v clt -- v output voltage, v o -- v ctl input voltage, v clt -- v
LV59001M ps no.a1973-7/7 v in 1 and v in 2 the dropout voltage can be lowered by making v in 1 and v in 2 another power supply within a some current range. refer to figure 1. 1.5 0 0.5 1.0 vdrop max -- i o 300 0 600 900 1200 1000 530 (1) (2) maximum dropout voltage, vdrop max -- v output current, i o -- ma (1) v in 1 and v in 2 are connected. (2) v in 1 and v in 2 are another power supplies. (v in 2 = 3v) 0.6 0.4 figure 1 vin1 and vin2 voltage when setting it to 0.8v v o 1.2v this ic provides for the lowest operation voltage in vin1 and vin2 when v o is provided within the range of 0.8v v o 1.2v though is possible the v o output setting even as for 0.8v to 3.5v. please refer to an electric specification. this catalog provides information as of september, 2011. specifications and information herein are subject to change without notice. sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliab ility pr oducts, however, any and all semiconductor products fail or malfunction with some probab ility. it is possible that these pr obab ilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equip ment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd.
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